| PART |
Description |
Maker |
| NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
| M57714SH |
490-512MHz, 12.5V, 7W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| STK14C88-M |
32K x 8 AUTOSTORE nvSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM
|
Simtek
|
| EMC1438-2-AP-TR EMC1438-1-AP-TR |
1°C Multiple Temperature Sensor with Hardware Controlled Standby & Hottest of Multiple Zones
|
SMSC Corporation
|
| M57729SH |
490-512 MHz, 12.5V, 30W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| EQ-730L |
EQ-730L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| EQ-731L |
EQ-731L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| LDM-0808-1000-93 |
CW Output Power: 1 W Typical 808 nm Emission Wavelength High-efficiency Quantum Well Structure TO5 Package
|
Roithner LaserTechnik GmbH
|
| M74DW66500B90ZT M74DW66500B M74DW66500B70ZT |
2x 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 32Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| CS201 |
Capacitor Networks, Single-In-Line, Coated SIP, ""D"" Profile, X7R and COG capacitors available, Multiple isolated capacitors, Multiple capacitors, common ground, Custom design capability
|
Vishay
|
| M36WT864TF 8967 M36WV8B85ZA6T M36WT864 M36WT864B10 |
From old datasheet system
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| C391PS C391PC C391PD C391PE C391PM C391PN |
ECONOLINE: RTS & RTD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%
Phase Control SCR 490 Amperes Avg 1300-1800 Volts
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
|
